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APT15GP60BDF1
600V
POWER MOS 7 IGBT
TO-247
(R)
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
(R)
G
C
* Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient
* 100 kHz operation @ 400V, 19A * 200 kHz operation @ 400V, 12A * SSOA rated
E
C G E
All Ratings: TC = 25C unless otherwise specified.
APT15GP60BDF1 UNIT
600 20 30 56 27 65 65A @ 600V 250 -55 to 150 300
Watts C Amps Volts
Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
@ TC = 25C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX UNIT
600 3 4.5 2.2 2.1 500
2
6 2.7
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
3000 100
nA
I GES
Gate-Emitter Leakage Current (VGE = 20V)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
050-7428
Rev B
4-2003
I CES
A
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C)
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
1 APT15GP60BDF1
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 15A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V I C = 15A
4 5
MIN
TYP
MAX
UNIT
1685 210 15 7.5 55 12 15 65 8 12 29 58 130 152 121 8 12 69 88 130 267 268
MIN TYP MAX UNIT C/W gm ns ns A nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area
td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Symbol RJC RJC WT
Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
44 55 6
R G = 5 TJ = +25C
J
Inductive Switching (125C) VCC = 400V VGE = 15V I C = 15A R G = 5 TJ = +125C
Turn-on Switching Energy (Diode) Turn-off Switching Energy
66
J
THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight
.50 1.31 5.90
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7428
Rev B
4-2003
TYPICAL PERFORMANCE CURVES
30 25
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
APT15GP60BDF1
30
VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC, COLLECTOR CURRENT (A)
20
IC, COLLECTOR CURRENT (A)
25 20
15 TC=25C TC=-55C 5 0 0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(VGE = 15V) 100 TJ = -55C TC=125C
15 TC=25C TC=-55C 5 0 TC=125C
10
10
0 0.5 1 1.5 2 2.5 3 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST <0.5 % DUTY CYCLE
FIGURE 2, Output Characteristics (VGE = 10V) 16 14 12 10 8 VCE = 480V 6 4 2 0 0 10 20 30 40 50 GATE CHARGE (nC) FIGURE 4, Gate Charge 60
IC = 15A TJ = 25C
IC, COLLECTOR CURRENT (A)
80
VCE = 120V VCE = 300V
60
40 TJ = 25C 20 TJ = 125C 0 0 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5 3 2.5 IC =30A 2 1.5 1 0.5 0 IC = 15A
3.5 3 IC =30A 2.5 IC = 15A 2 IC = 7.5A 1.5 1 0.5
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 7.5A
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.2
IC, DC COLLECTOR CURRENT(A)
6
0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50 -25
4-2003 050-7428 Rev B
0 -50
-25
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
1.15 1.10 1.05 1.0 0.95 0.9 0.85 0.8 -50
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
APT15GP60BDF1
18
td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
80
VGE =15V,TJ=125C
16 14 12 VGE= 15V 10 8 6 4 2 0 5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 30
TJ = 25 or 125C,VGE = 10V
70 60 50 40 30 20 10 0 5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 100 VCE = 400V RG = 5 L = 100 H
VGE =10V,TJ=25C VGE =15V,TJ=25C VGE =10V,TJ=125C
VGE= 10V
VCE = 400V TJ = 25C or 125C RG = 5 L = 100 H
25
tr, RISE TIME (ns) tf, FALL TIME (ns)
80
TJ = 125C, VGE = 10V or 15V
20
60
TJ = 25C, VGE = 10V or 15V
15 10
TJ = 25 or 125C,VGE = 15V RG =5, L = 100H, VCE = 400V
40
5 0
20
RG =5, L = 100H, VCE = 400V
0
5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 700
EON2, TURN ON ENERGY LOSS (J)
VCE = 400V L = 100 H RG = 5
5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 700
EOFF, TURN OFF ENERGY LOSS (J)
VCE = 400V L = 100 H RG = 5
TJ = 125C, VGE = 10V or 15V
600 500 400 300 200
TJ =125C, VGE=15V
600 500 400 300 200 100 0
TJ =125C,VGE=10V
TJ = 25C, VGE=15V
100 0
TJ = 25C, VGE=10V
TJ = 25C, VGE = 10V or 15V
0 5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 900
SWITCHING ENERGY LOSSES (J)
VCE = 400V VGE = +15V TJ = 125C
5 10 15 20 25 30 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 700
VCE = 400V VGE = +15V RG = 5
SWITCHING ENERGY LOSSES (J)
800 700 600 500 400
Eon2 30A 600 500
Eoff 30A
Eon2 30A 400 300 200 100 0 -50
Eoff 30A
Eon2 15A 300 200 100 0 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0 Eon2 7.5A Eoff 7.5A Eoff 15A
4-2003
Eon2 15A Eoff 15A
Eon2 7.5A Eoff 7.5A
Rev B
050-7428
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
4,000
IC, COLLECTOR CURRENT (A)
70 Cies 60 50 40 30 20 10 0
APT15GP60BDF1
1,000
C, CAPACITANCE ( F)
500 Coes 100 50 Cres 10 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0
P
100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area
0
0.60
ZJC, THERMAL IMPEDANCE (C/W)
0.50 0.9 0.40 0.7 0.30 0.5
Note:
PDM
0.20 0.3 0.10 0.1 0.05 0 10-5 10-4 SINGLE PULSE
t1 t2 Duty Factor D = t1/t2
Peak TJ = PDM x ZJC + TC
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
292
FMAX, OPERATING FREQUENCY (kHz)
RC MODEL Junction temp. ( "C) 0.216 Power (Watts) 0.284 Case temperature 0.164 0.00600
100
50
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
15 20 25 30 35 40 45 50 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
10
TJ = 125C TC = 75C D = 50 % VCE = 400V RG = 5
5
10
Fmax = min(f max1 , f max 2 ) f max1 = f max 2 = Pdiss = 0.05 t d (on ) + t r + t d(off ) + t f Pdiss - Pcond E on 2 + E off
4-2003 050-7428 Rev B
TJ - TC R JC
APT15GP60BDF1
APT15DF60
Gate Voltage
10%
TJ = 125 C
td(on)
V CC IC V CE
tr 90%
A D.U.T.
Collector Current
5%
Switching Energy
10%
5%
Collector Voltage
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
VTEST
90% Gate Voltage Collector Voltage
*DRIVER SAME TYPE AS D.U.T.
TJ = 125 C
A V CE IC 100uH V CLAMP B
td(off)
tf
90%
10% Switching Energy
0
A DRIVER* D.U.T.
Collector Current
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
050-7428
Rev B
4-2003
TYPICAL PERFORMANCE CURVES
APT15GP60BDF1
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Characteristic / Test Conditions Maximum Average Forward Current (TC = 94C, Duty Cycle = 0.5) RMS Forward Current Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 15A VF Forward Voltage IF = 30A IF = 15A, TJ = 150C MIN
All Ratings: TC = 25C unless otherwise specified.
APT15GP60BDF1 UNIT
15 36 110
Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol TYP MAX UNIT
2.2 2.7 1.6
Volts
DYNAMIC CHARACTERISTICS
Symbol trr1 trr2 tfr1 tfr2 IRRM1 IRRM2 Qrr1 Qrr2 Vfr1 Vfr2 Characteristic Reverse Recovery Time IF = 15A, diF /dt = -200A/s, VR = 400V Forward Recovery Time IF = 15A, diF /dt = 200A/s, VR = 400V Maximum Reverse Recovery Current IF = 15A, diF /dt = -200A/s, VR = 400V Reverse Recovery Charge IF = 15A, diF /dt = -200A/s, VR = 400V Forward Recovery Voltage IF = 15A, diF /dt = 200A/s, VR = 400V
1.4
, THERMAL IMPEDANCE (C/W)
MIN TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C
TYP
MAX
UNIT
56 58 106 106 2.3 6 77 235 5 5
Volts nC Amps ns
1.2 1.0 0.8
0.9
0.7
0.5 0.6 0.4 0.2 0 0.3
Note:
PDM t1 t2
JC
0.1 0.05 10-5 10-4 SINGLE PULSE
Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
Z
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 25. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
4-2003 050-7428 Rev B
APT15GP60BDF1
100
Qrr, REVERSE RECOVERY CHARGE (nC)
500 450
TJ = 100C VR = 400V
80
IF, FORWARD CURRENT (A)
400 30A 350 15A 300 250 200 150 100 50 0 7.5A
60
TJ = 175C TJ = 100C
40
TJ = 150C TJ = 25C
20
0
0
1 2 3 4 5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 26, Forward Voltage vs. Forward Current
TJ = 100C VR = 400V
0 200 400 600 800 1000 diF /dt, CURRENT RATE OF DECREASE(A/s) Figure 27, Reverse Recovery Charge vs. Current Rate of Decrease 1.6
16
IRRM, REVERSE RECOVERY CURRENT (A)
14 12 10
30A
Kf, DYNAMIC PARAMETERS (NORMALIZED)
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 I RRM t rr Qrr t rr
Qrr
15A 8 6 4 2 0 7.5A
0 200 400 600 800 1000 diF /dt, CURRENT RATE OF DECREASE (A/s) Figure 28, Reverse Recovery Current vs. Current Rate of Decrease 100
TJ = 100C VR = 350V
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29, Dynamic Parameters vs. Junction Temperature 30 Vfr 120
Vfr, FORWARD RECOVERY VOLTAGE (V)
0
30A 60 15A 7.5A 40
tfr, FORWARD RECOVERY TIME (ns)
trr, REVERSE RECOVERY TIME (ns)
80
25 20 15 10 5 0
100 80 60 t fr 40 20
20
0 200 400 600 800 1000 diF /dt, CURRENT RATE OF DECREASEs (A/s) Figure 30, Reverse Recovery Time vs. Current Rate of Decrease 250
0
0 0 200 400 600 800 1000 diF /dt, CURRENT RATE OF DECREASE (A/s) Figure 31, Forward Recovery Voltage/Time vs. Current Rate of Decrease 30 25
TJ = 100C VR = 400V IF = 15A
CJ, JUNCTION CAPACITANCE (pF)
200
20 150
IF(AV) (A)
15
100
4-2003
10 50 5 0
Rev B
0 10 100 200 VR, REVERSE VOLTAGE (V) Figure 32, Junction Capacitance vs. Reverse Voltage .3 1
050-7428
100 125 150 Case Temperature (C) Figure 33, Maximum Average Forward Current vs. CaseTemperature
25
50
75
APT15GP60BDF1
Vr
D.U.T. 30H
trr/Qrr Waveform
+15v diF /dt Adjust 0v -15v
PEARSON 2878 CURRENT TRANSFORMER
Figure 10. Diode Reverse Recovery Test Circuit and Waveforms
1 2
IF - Forward Conduction Current diF /dt - Current Rate of Decrease, Rate of Diode Current Change Through Zero Crossing From Positive to Negative. IRRM - Maximum Reverse Recovery Current. 1 Zero 5 3 0.25 IRRM Slope = diM/dt 4 6
3 4
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
2
5 6
Figure 34, Diode Reverse Recovery Waveform and Definitions
RC MODEL Junction temp. ( "C) 0.698 0.00173F
Power (Watts)
0.438
0.0395F
0.165 Case temperature
0.670F
TRANSIENT THERMAL IMPEDANCE MODEL
T0-247 Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
2.21 (.087) 2.59 (.102)
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7428
5.45 (.215) BSC 2-Plcs.
Rev B
Gate Collector (Cathode) Emitter (Anode)
4-2003

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